Page 28 - Hindi Class - 1.cdr
P. 28

DEpartmEnt oF appliED physics


          9.  Kumar, Sudhir, Suman Joshi, Durgesh Kumar Sharma, and Sushil Auluck. “Influence of Defect Pairs in Ga-Based Ordered
             Defect Compounds: A Hybrid Density Functional Study.” Canadian Journal of Physics, vol. 98, no. 8, NRC Research Press,
             Oct. 2019, pp. 770–77, doi:10.1139/cjp-2018-0332.
          10.  Sharma, Durgesh Kumar, Sudhir Kumar, and Sushil Auluck. “Electronic Structure, Defect Properties, and Hydrogen
             Storage Capacity of 2H-WS2: A First-Principles Study.” International Journal of Hydrogen Energy, vol. 43, no. 52, 2018, pp.
             23126–34, doi:https://doi.org/10.1016/j.ijhydene.2018.10.199.
          11.  Durgesh Kumar Sharma, Sudhir Kumar, Sushil Auluck “Magnetism by Embedding 3d  Transition Metal Atoms into
             Germanene.” Journal of Physics D: Applied Physics, vol. 51, no. 22, IOP Publishing, 2018, p. 225006, doi:10.1088/1361-
             6463/aabf2e.
          12.  Sharma, Durgesh Kumar, Sudhir Kumar, A. Laref, et al. “Mono and Bi-Layer Germanene as Prospective Anode Material
             for Li-Ion Batteries: A First-Principles Study.” Computational Condensed Matter, vol. 16, 2018, p. e00314, doi:https://doi.
             org/10.1016/j.cocom.2018.e00314.
          13.  Sharma, Durgesh Kumar, Sudhir Kumar, and Sushil Auluck. “Strain Induced Optoelectronic Properties of Two Dimensional
             MnPSe3/WS2 Heterostructure.” Journal of Physics: Condensed Matter, vol. 32, no. 31, IOP Publishing, 2020, p. 315501,
             doi:10.1088/1361-648x/ab7f6d.
          14.  Durgesh Kumar Sharma, Sudhir Kumar, Sushil. Auluck “Theoretical Characterization of C Doped SiGe Monolayer.” Journal
             of Applied Physics, vol. 125, no. 14, American Institute of Physics, Apr. 2019, p. 145703, doi:10.1063/1.5084187.
          15.   A Singh, V. K. Gangwar, Prashant Shahi, Debarati Pal, Rahul Singh, Shiv Kumar, S. Singh, S. K. Gupta, S. Kumar, Jinguang
             Cheng, S Chatterjee “Anomalous and Topological Hall Effect in Cu Doped Sb2Te3 Topological Insulator.” Applied Physics
             Letters, vol. 117, no. 9, American Institute of Physics, Aug. 2020, p. 92403, doi:10.1063/5.0021722.


          Declaration: I hereby declare that above mentioned data are correct and in best of my knowledge. In case of any
          discrepancies, I shall be sole responsible.





                                                                                                    (Sudhir Kumar)








































          Mahatma Jyotiba Phule Rohilkhand University, Bareilly, Uttar Pradesh                                  15      RESEARCH COMPENDIUM (2015-21)
   23   24   25   26   27   28   29   30   31   32   33